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Hiramoto and Kobayashi Laboratory Web Page

Hiramoto and Kobayashi Laboratory Web Page. Hirmoto and Kobayashi Laboratory. Www-vlsi@nano.iis.u-tokyo.ac.jp.

http://vlsi.iis.u-tokyo.ac.jp/

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Hiramoto and Kobayashi Laboratory Web Page | vlsi.iis.u-tokyo.ac.jp Reviews
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2 research
3 research subjects
4 international journals
5 international conferences
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Hiramoto and Kobayashi Laboratory Web Page | vlsi.iis.u-tokyo.ac.jp Reviews

https://vlsi.iis.u-tokyo.ac.jp

Hiramoto and Kobayashi Laboratory Web Page. Hirmoto and Kobayashi Laboratory. Www-vlsi@nano.iis.u-tokyo.ac.jp.

INTERNAL PAGES

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1

publicationlist

http://vlsi.iis.u-tokyo.ac.jp/contents/publicationlist.shtml

Tomoko Mizutani, Takuya Saraya, Kiyoshi Takeuchi, Masaharu Kobayashi, and Toshiro Hiramoto, Transistor-level characterization of static random access memory bit failures induced by random telegraph noise , Japanese Journal of Applied Physics, vol. 55, no.4S, 04ED05, March, 2016. Kosmas Galatsis, Paolo Gargini, Toshiro Hiramoto, Dirk Beernaert, Roger DeKeersmaecker, Joachim Pelka, and Lothar Pfitzner, Nanoelectronics Research Gaps and Recommendations, A Report from the International Planning Working Group...

2

member

http://vlsi.iis.u-tokyo.ac.jp/contents/members.html

E-mail address: Please replace "[AT]" with "@". Hiramoto[AT]nano.iis.u-tokyo.ac.jp. Masa-kobayashi[AT]nano.iis.u-tokyo.ac.jp. Saraya[AT]nano.iis.u-tokyo.ac.jp. Nagasiro[AT]nano.iis.u-tokyo.ac.jp. Ito[AT]nano.iis.u-tokyo.ac.jp. Takakura[AT]nano.iis.u-tokyo.ac.jp. Fukui[AT]nano.iis.u-tokyo.ac.jp. Ssuzuki[AT]nano.iis.u-tokyo.ac.jp. Takeuchi[AT]nano.iis.u-tokyo.ac.jp. Mizutani[AT]nano.iis.u-tokyo.ac.jp. Hqiu[AT]nano.iis.u-tokyo.ac.jp. Khjang[AT]nano.iis.u-tokyo.ac.jp. Mar 2016, Master. Oct 2015, Ph.D.

3

Research Subjects in Hiramoto Lab.

http://vlsi.iis.u-tokyo.ac.jp/contents/subjects.html

Research Subjects in Hiramoto. 1 Device Improvement by Collaboration with Circuit Design. 11 Post-Fabrication Self-Improvement of Transistor Variability. We have proposed a novel post-fabrication self-suppression technique of transistor variability [1,2]. We have found that the SRAM cell inherently has the self-suppression mechanism and the technique utilizes this mechanism. The technique utilizes the self-suppression mechanism. When high voltage is applied to the Vdd. M Suzuki, T. Saraya. 80, June 10, 2...

4

LINKS

http://vlsi.iis.u-tokyo.ac.jp/contents/link.html

HOME PAGE of The University of Tokyo. Institute of Industrial Science. Institute of Industrial Science Computer Center. VLSI Design and Education Center. Educational Computer Centre Home Page. HOME page of EE Depts. Nadiaics.es.osaka-u.ac.jp. Tronum.u-tokyo.ac.jp. Ftphipecs.hokudai.ac.jp. Ftpipc.chiba-u.ac.jp. Ftpdcs.ed.ac.uk. Ftpmath.s.chiba-u.ac.jp. Search Engine (inside Japan). Search Engine (Outside Japan). Http:/ docs.sun.com/. Online Journal Publishing Service Home Page. The FreeBSD Project (japan).

5

General Information

http://vlsi.iis.u-tokyo.ac.jp/contents/info.html

Hiramoto and Kobayashi Laboratory (Ee-206),. Institute of Industrial Science,. University of Tokyo,. 4-6-1 Komaba Meguro, Tokyo, Japan, 153-8505.

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リンク

http://icdesign.iis.u-tokyo.ac.jp/link1.html

研究室について (About Lab.). The University of Tokyo. Department of Electrical Engineering and Information Systems (EEIS),. Graduate School of Engineering, The University of Tokyo. VLSI Design and Education Center, The University of Tokyo. Institute of Industrial Science, The University of Tokyo. Sakurai Laboratory, Institute of Industrial Science, The University of Tokyo. Hiramoto Laboratory, Institute of Industrial Science, The University of Tokyo.

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