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Laborotory of Diffusion and Defect Formation in Semiconductors — Ioffe Institute

Laboratory of Diffusion and Defect Formation in Semiconductors. Prof Maria V. Zamoryanskaya. Tel: 7 (812) 292-7382. Fax: 7 (812) 297-1017 Ioffe Institute. St Petersburg, 194021. Investigation of semiconductors and dielectrics by means of electron-probe methods:. Cathodoluminescent investigation of semiconductor heterostructures (Si, III-V, II-VI, III-N, SiC, );. Cathodoluminescence of wide-gap crystals, thin films and ceramic doped with f and d-ions;. Ioffe Physical-Technical Institute,.

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Laborotory of Diffusion and Defect Formation in Semiconductors — Ioffe Institute | microbeam.org Reviews
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Laboratory of Diffusion and Defect Formation in Semiconductors. Prof Maria V. Zamoryanskaya. Tel: 7 (812) 292-7382. Fax: 7 (812) 297-1017 Ioffe Institute. St Petersburg, 194021. Investigation of semiconductors and dielectrics by means of electron-probe methods:. Cathodoluminescent investigation of semiconductor heterostructures (Si, III-V, II-VI, III-N, SiC, );. Cathodoluminescence of wide-gap crystals, thin films and ceramic doped with f and d-ions;. Ioffe Physical-Technical Institute,.
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Laborotory of Diffusion and Defect Formation in Semiconductors — Ioffe Institute | microbeam.org Reviews

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Laboratory of Diffusion and Defect Formation in Semiconductors. Prof Maria V. Zamoryanskaya. Tel: 7 (812) 292-7382. Fax: 7 (812) 297-1017 Ioffe Institute. St Petersburg, 194021. Investigation of semiconductors and dielectrics by means of electron-probe methods:. Cathodoluminescent investigation of semiconductor heterostructures (Si, III-V, II-VI, III-N, SiC, );. Cathodoluminescence of wide-gap crystals, thin films and ceramic doped with f and d-ions;. Ioffe Physical-Technical Institute,.

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Laborotory of Diffusion and Defect Formation in Semiconductors — Ioffe Institute

Laboratory of Diffusion and Defect Formation in Semiconductors. Prof Maria V. Zamoryanskaya. Tel: 7 (812) 292-7382. Fax: 7 (812) 297-1017 Ioffe Institute. St Petersburg, 194021. Investigation of semiconductors and dielectrics by means of electron-probe methods:. Cathodoluminescent investigation of semiconductor heterostructures (Si, III-V, II-VI, III-N, SiC, );. Cathodoluminescence of wide-gap crystals, thin films and ceramic doped with f and d-ions;. Ioffe Physical-Technical Institute,.

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